BAT54XV2T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications .
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• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES
1 CATHODE 2 ANODE
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Symbol VR Value 30 Unit V 1
2
SOD−523 CASE 502 PLASTIC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Bo.
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No. | Part # | Manufacture | Description | Datasheet |
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ON Semiconductor |
Schottky Barrier Diodes |
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ON Semiconductor |
Dual Common Cathode Schottky Barrier Diodes |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes |
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ON Semiconductor |
Dual Series Schottky Barrier Diodes |
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ON Semiconductor |
Schottky Barrier Diodes |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Sirenza Microdevices |
Cascadable InGaP/GaAs HBT MMIC Amplifier |
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Pan Jit International |
EXTREME LOW VF SCHOTTKY RECTIFIER |
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Pan Jit International |
EXTREME LOW VF SCHOTTKY RECTIFIER |
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Pan Jit International |
EXTREME LOW VF SCHOTTKY RECTIFIER |
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Sanyo Semicon Device |
40V 10A Rectifier |
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