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IXFL82N60P |
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| Part Number | IXFL82N60P |
| Manufacturer | IXYS Corporation |
| Description | PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast I... |
| Features |
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ISOPLUS264 TM (IXFL)
G D S
(Isolated Tab)
G = Gate S = Source
D = Drain
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International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
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Advantages
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Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VG... |
| Document |
 IXFL82N60P Data Sheet
PDF 197.18KB |
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