SVD740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S- structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s.
∗ 10A,400V,RDS(on)(typ)=0.45 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD740T SVD740F Package TO-220-3L TO-220F-3L Marking SVD740T SVD740F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 160 1.28 384 -55~+150 -55~+150 Rating SVD740T 4.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | SVD740T |
Silan Microelectronics |
400V N-CHANNEL MOSFET | |
2 | SVD730D |
Silan Microelectronics |
400V N-CHANNEL MOSFET | |
3 | SVD730DTR |
Silan Microelectronics |
400V N-CHANNEL MOSFET | |
4 | SVD730F |
Silan Microelectronics |
400V N-CHANNEL MOSFET | |
5 | SVD730T |
Silan Microelectronics |
400V N-CHANNEL MOSFET |