SP8601 Dual N-Channel Enhancement Mode Field Effect Transistor

SP8601 Dual N-Channel Enhancement Mode Field Effect Transistor

Green Product SP8601 Ver 2.5 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.5 @ VGS=4.5V 18.5 @ VGS=4.0V 20V 7.2A 20.0 @ VGS=3.7V 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V FEATURES Super high dense cell design for low.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.2 5.8 43 1.47 0.94 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 85 °C/W Det.