SP8009 N-Channel Enhancement Mode Field Effect Transistor

SP8009 N-Channel Enhancement Mode Field Effect Transistor

Green Product SP8009 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 24A R DS(ON) (m Ω) Typ 6.0 @ VGS=10V 7.2 @ VGS=6V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P in 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 30 ±20 Units V V A A W °C TA=25°C TA=25°C 24 72 1.67 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Jul,18,2013 1 www.samho.