STF2458A Dual N-Channel Enhancement Mode Field Effect Transistor

STF2458A Dual N-Channel Enhancement Mode Field Effect Transistor

Gre r e Pro STF2458A Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 10.0 @ VGS=4.5V 10.5 @ VGS=4.0V 24V 10A 11.0 @ VGS=3.7V 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V FEATURES Super high dense cell design for low .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1 P IN 1 D1/D2 G2 S2 S2 Bottom Drain Contact G1 S1 S1 3 2 1 4 G2 5 6 S2 S2 T D F N 2X 5 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 24 ±12 10 8 48 1.67 1.07 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHAR.