STF8234 N-Channel Enhancement Mode Field Effect Transistor

STF8234 N-Channel Enhancement Mode Field Effect Transistor

Green Product STF8234 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 5.2 @ VGS=4.5V 5.3 @ VGS=4.0V 20V 14A 5.4 @ VGS=3.7V 5.9 @ VGS=3.1V 6.8 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON)..

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 14 11.2 80 a Units V V A A A W W °C Maximum Power Dissipation 1.8 1.1 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 70.