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STB8444 |
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| Part Number | STB8444 |
| Manufacturer | SamHop Microelectronics |
| Description | STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and re... |
| Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package.
ID
80A
R DS(ON) (m Ω) Max
4.8 @ VGS=10V
D
D
G
S
G D S
G
STP SERIES TO-220
STB SERIES TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 40 ±20 TC=25°C 80 264 306 TC=25°C 62 -55 to 150
Units V V A A mJ W °C
Sigle Pulse Avalanche Energy Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERI... |
| Document |
 STB8444 Data Sheet
PDF 228.75KB |
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