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STP652F |
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| Part Number | STP652F |
| Manufacturer | SamHop |
| Description | Gre r Pro STP652F Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 29A R DS(ON) (m Ω) Typ 22 @ VGS=10V FEATURE... |
| Features |
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F package.
D
G
G D S
STF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy
d b a
Limit 60 ±20 T C =25 °C T C =70 °C 29 24 90 110
a
Units V V A A A mJ W W °C
Maximum Power Dissipation
TC=25°C TC=70°C
46 32 -55 to 175
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, ... |
| Document |
 STP652F Data Sheet
PDF 115.98KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Stanson Technology |
MOSFET |
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SamHop |
N-Channel Enhancement Mode Field Effect Transistor |
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STMicroelectronics |
N-channel Power MOSFET |
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STMicroelectronics |
N-CHANNEL Power MOSFET |
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STMicroelectronics |
N-channel Power MOSFET |
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INCHANGE |
N-Channel MOSFET |
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Stanson Technology |
MOSFET |
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Stanson Technology |
MOSFET |
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STANSON |
P-Channel Enhancement Mode MOSFET |
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Stanson Technology |
MOSFET |
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