STB70L60 Datasheet

STB70L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor

Green Product STB/P70L60 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 70A.

Features

Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 70A R DS(ON) (m Ω) Typ 12 @ VGS=10V 18 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 70 58.6 206 272 TC=25°C TC=70°C 125 87.5 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Po.