STT02N20 N-Channel MOSFET

STT02N20 N-Channel MOSFET

Green Product STT02N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 1.4A R DS(ON) ( Ω) Typ 1.22 @ VGS=10V 1.29 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surfac.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d a c Limit 200 ±20 TA=25°C TA=70°C 1.4 1.1 9 3.75 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambi.