STT3434 N-Channel MOSFET

STT3434 N-Channel MOSFET

The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS REF. A A1 A2 c D E.

Features

TA=25℃ RθJA Tj, Tstg Ratings 30 ±12 6.1 4.9 30 1.14 0.01 110 -55 ~ +150 Unit V V A A W W/℃ ℃/W ℃ 01-June-2005 Rev. A Page 1 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current (Tj=25℃) Zero Gate Voltage Drain Current (Tj=75℃) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 0.6 - Typ. 20 8 1.9 2.6 21 45 40 30 Max. ±100 1 5 34 50 12.