STM6926 Dual N-Channel MOSFET

STM6926 Dual N-Channel MOSFET

Green Product S T M6926 Mar.29 ,2007 S amHop Microelectronics C orp. Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m ıΩ ) Max ID 8.5A R DS (ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount .

Features

oted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 10 1 1.7 12 14 20 25 1500 220 145 23 22 88 27 28 12 3 6 3 V uA uA V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 16 m ohm 18 m ohm A S PF PF PF DYNAMIC.