S-L2N7002LT1G Small Signal MOSFET

S-L2N7002LT1G Small Signal MOSFET

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Drain–Source Voltage Drain.

Features

ubstrate,(Note 4.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RθJA TJ, Tstg 417 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C (Top View) RθJA PD MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR
  –5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 702 1 W Source 2 Gate 702 W ORDERING INFORMATION Device L2N7002LT1G S-L2N7002LT1G L2N7.