The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; t.
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation: Standby: 3 µW (typ) (VCC = 3.0 V)
• Equal access and cycle times
• Common data input and output. Three state output
• Battery backup operation. 2 chip selection for battery backup
• Temperature Range: -40 to +85°C
Rev.1.00, May.24.2007, page 1 of 15
R1LV0416D Series
Ordering Information
Type No. R1LV0416DSB-5SI R1LV0416DSB-7LI R1LV0416DBG-5SI R1LV0416DBG-7LI Access time 55 ns 70 ns 55 ns 70 ns 400-mil 44-pin plastic TSOP II PTSB0044GA-A (44P3W-H) 48-ball CSP with 0.75 mm ball pitch PTBG0048HB.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | R1LV0416C-I |
Renesas Technology |
Wide Temperature Range Version 4M SRAM | |
2 | R1LV0416C-I |
Renesas Technology |
4M SRAM | |
3 | R1LV0416CBG-I |
Renesas Technology |
Wide Temperature Range Version 4M SRAM | |
4 | R1LV0416CSB-5SI |
Renesas Technology |
4M SRAM | |
5 | R1LV0416CSB-7LI |
Renesas Technology |
4M SRAM | |
6 | R1LV0416DBG-5SI |
Renesas |
4M SRAM | |
7 | R1LV0416DBG-7LI |
Renesas |
4M SRAM | |
8 | R1LV0416DSB-5SI |
Renesas |
4M SRAM | |
9 | R1LV0416DSB-7LI |
Renesas |
4M SRAM | |
10 | R1LV0414D |
Renesas |
4M SRAM | |
11 | R1LV0414DSB-5SI |
Renesas |
4M SRAM | |
12 | R1LV0414DSB-7LI |
Renesas |
4M SRAM | |
13 | R1LV0414DSB-7LI |
Renesas |
4M SRAM | |
14 | R1LV0408CSA-5SI |
Renesas |
Wide Temperature Range Version 4M SRAM | |
15 | R1LV0408CSA-7LI |
Renesas |
Wide Temperature Range Version 4M SRAM |