MOC8106M Datasheet

MOC8106M Phototransistor Optocouplers

The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely.

Features

■ UL recognized (File # E90700, Vol. 2)
■ VDE recognized Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.
■
■
■
■
  – Add option V (e.g., CNY17F2VM)
  – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Package Outlines Applications.