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TK58A06N1

Toshiba Semiconductor
Part Number TK58A06N1
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Silicon N-Channel MOSFET
Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK58A06N1 1. Applications • Switching Voltage Regulators 2....
Features (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VD...
Published Sep 10, 2014
Datasheet PDF File TK58A06N1 PDF File


TK58A06N1
TK58A06N1

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Features
(1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK58A06N1 1: Gate...



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