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TK65G10N1

Toshiba Semiconductor
Part Number TK65G10N1
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Silicon N-Channel MOSFET
Description TK65G10N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK65G10N1 1. Applications • Switching Voltage Re...
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max)...
Published Sep 6, 2014
Datasheet PDF File TK65G10N1 PDF File


TK65G10N1
TK65G10N1

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Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain...



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