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TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS 2SC2060 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.75W (Tamb=25ºC) Collector Current ICM: 1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 40V Operating and storage junction temperature range TJ, Tstg: -55ºC to + 1.
Power dissipation PCM: 0.75W (Tamb=25ºC) Collector Current ICM: 1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 40V Operating and storage junction temperature range TJ, Tstg: -55ºC to + 150ºC ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO IEBO hFE(1) VCEsat Test Conditions IC= 100 µA,.
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 2SC2060 |
LZG |
SILICON NPN TRANSISTOR |
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| 2 | 2SC2060 |
JCET |
NPN Transistor |
|
| 3 | 2SC2060 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SC2061 |
Rohm |
Medium Power Amp / NPN Silicon Transistor |
|
| 5 | 2SC2062S |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SC2063 |
Rohm |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
|
| 7 | 2SC2068 |
Toshiba Semiconductor |
Silicon NPN Triple Diffused Type Transistor |
|
| 8 | 2SC2000 |
NEC |
NPN SILICON TRANSISTOR |
|
| 9 | 2SC2001 |
NEC |
NPN SILICON TRANSISTOR |
|
| 10 | 2SC2001 |
MCC |
NPN Transistor |
|
| 11 | 2SC2001 |
SeCoS |
NPN Plastic Encapsulated Transistor |
|
| 12 | 2SC2001 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 13 | 2SC2001 |
USHA |
Transistors |
|
| 14 | 2SC2001 |
BLUECOLOUR |
NPN Silicon Epitaxial Planar Transistor |
|
| 15 | 2SC2001 |
Dc Components |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
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