2SC2060(3DG2060) : 1~2W 。 NPN /SILICON NPN TRANSISTOR Purpose:1~2W low frequency amplifiers. :,, 2SA934(3CG934)。 Features: High PC, low collector saturation voltage, complementary pair with 2SA934(3CG934). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg.
High PC, low collector saturation voltage, complementary pair with 2SA934(3CG934). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg 40 32 5.0 1.0 2.0 750 150 -55~150 V V V A A mW ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=50μA IC=1.0mA IE=50μA VCB=20V VEB=4.0V VCE=3.0V IC=500mA VCE=5.0V VCB=10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=100mA IB=50mA IC=50mA f=1.0MHz 40 32 5.0 0.5 0.5 82 50 150 15 Q:120~270 R:180~390 30 390 0.4 V V V μA μA V MHz pF hF.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | 2SC2060 |
Changjiang |
NPN Transistor | |
2 | 2SC2060 |
JCET |
NPN Transistor | |
3 | 2SC2060 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
4 | 2SC2061 |
Rohm |
Medium Power Amp / NPN Silicon Transistor | |
5 | 2SC2062S |
Rohm |
High-gain Amplifier Transistor | |
6 | 2SC2063 |
Rohm |
RF Amplifier Epitaxial Planar NPN Silicon Transistors | |
7 | 2SC2068 |
Toshiba Semiconductor |
Silicon NPN Triple Diffused Type Transistor | |
8 | 2SC2000 |
NEC |
NPN SILICON TRANSISTOR | |
9 | 2SC2001 |
NEC |
NPN SILICON TRANSISTOR | |
10 | 2SC2001 |
MCC |
NPN Transistor | |
11 | 2SC2001 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
12 | 2SC2001 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
13 | 2SC2001 |
USHA |
Transistors | |
14 | 2SC2001 |
BLUECOLOUR |
NPN Silicon Epitaxial Planar Transistor | |
15 | 2SC2001 |
Dc Components |
NPN EPITAXIAL PLANAR TRANSISTOR |