PD-97326A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHLNM77110 IRHLNM73110 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.29Ω 0.29Ω ID 6.5A 6.5A 2N7609U8 IRHLNM77110 100V, N-CHANNEL TECHNOLOGY International Rectifier’s R7TM Logic L.
n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diod.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | 2N7604U2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
2 | 2N7612M1 |
International Rectifier |
Power MOSFET | |
3 | 2N7614M1 |
International Rectifier |
Power MOSFET | |
4 | 2N7617UC |
International Rectifier |
Power MOSFET | |
5 | 2N7621T2 |
International Rectifier |
N-CHANNEL POWER MOSFET | |
6 | 2N7627UC |
International Rectifier |
Power MOSFET | |
7 | 2N7632UC |
International Rectifier |
Power MOSFET | |
8 | 2N7635-GA |
GeneSiC |
Junction Transistor | |
9 | 2N7636-GA |
GeneSiC |
Junction Transistor | |
10 | 2N7637-GA |
GeneSiC |
Junction Transistor | |
11 | 2N7638-GA |
GeneSiC |
Junction Transistor | |
12 | 2N7639-GA |
GeneSiC |
OFF Silicon Carbide Junction Transistor | |
13 | 2N7639-GA |
GeneSiC |
Junction Transistor | |
14 | 2N7640-GA |
GeneSiC |
Junction Transistor | |
15 | 2N70 |
UTC |
N-CHANNEL POWER MOSFET |