IRFR812TRPBF Datasheet

IRFR812TRPBF Power MOSFET

PD -97773 IRFR812TRPbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. 500V 1.85Ω 75ns D ID 3.6A Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applic.

Features

• Fast body diode eliminates the need for external diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise immunity. Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current Max. 3.6 2.3 14.4 78 0.63 ± 20 32 -55 to + 150 300 (1.6mm from case ) 10lb in (1.1N m) S G D-Pak IRFR812TRPbF Units A W W/°C V V/ns °C ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltag.