NP8P128A13B1760E P8P Parallel Phase Change Memory

NP8P128A13B1760E P8P Parallel Phase Change Memory

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Features

P8P Parallel Phase Change Memory (PCM) Features
• High-performance READ
  – 115ns initial READ access
  – 135ns initial READ access
  – 25ns, 8-word asynchronous-page READ
• Architecture
  – Asymmetrically blocked architecture
  – Four 32KB parameter blocks with top or bottom configuration
  – 128KB main blocks
  – Serial peripheral interface (SPI) to enable lower pin count on-board programming
• Phase change memory (PCM)
  – Chalcogenide phase change storage element
  – Bit-alterable WRITE operation
• Voltage and power
  – VCC (core) voltage: 2.7
  –3.6V
  – VCCQ (I/O) voltage: 1.7
  –3.6V
  – Standby current: 80µA (TYP.