D1254 2SD1254

D1254 2SD1254

Power Transistors 2SD1254 Silicon NPN epitaxial planar type For power switching Complementary to 2SB931 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q q 1.5±0.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current tr.

Features

q q q q 1.5±0.1 1.5max. 1.1max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 130 80 7 6 3 30 1.3 150
  –55 to +150 Unit V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=.