W M.T O .C W 00Y 1 M.T . O W C W WW .100Y. M.T O W WW .100Y.C M.TW .TW M / 2SB1243 WW 00Y.CO 2SB1184 W .CO .TW Y W T . 0 Transistors .10 M .1 OM W WW 00Y.CO .TW C . W W Y W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1 W.
O zExternal dimensions W WW .100Y.C M.TW WW 00Y.CO 1) Low W WW .100Y.C M.TW T V CE(sat). . O W OM WW 002SB1243 W.1 .CO 2SB1184 Y.C VCE(sat) = -0.5V (Typ.)WW W Y W .TW W 0 T ± . 1 + 0.2 0 WW .100Y.C M T ± M . .B = -2A / -0.2A) 2.3 −0.1 1 M . 6.5±0.2 O W O W (I C /I C C0.5 . O W W +0.2 C W . Y W 5.1 C W Y W 0.5±0.1 −0.1 .T W the 2SD1760 00 W / 2SD1864. WW .100Y. 2) Complements M.T .100 W.1 Y.COM W M.T O W O W W C . W WW .100Y .TW WW .100Y.C M.TW M.T .100 M O W O W C . O W W WW .100Y WW .100Y.C 0.75M.TW 0.65±0.1 WW .100Y.C M.TW M.T O W O W 0.9 W .CO .TW WW .100Y.C ± M.TW 0.55±0.1 YStructure WW .1.
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