MT29F64G08CECCB Datasheet

MT29F64G08CECCB NAND Flash Memory

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Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1
• Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1 VB40100C PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, free-wheelin.