MT29F128G08CXACA NAND Flash Memory

MT29F128G08CXACA NAND Flash Memory

SHENZHENG SIWANG ELECTRONICS TECHNOLOGY CO.,LTD. TO-92MOD Plastic-Encapsulate Transistors 2SC2235 FEATURES 1. EMITTER TRANSISTOR (NPN) TO-92MOD Power dissipation PCM: 900 mW (Tamb=25℃) Collector current 800 mA ICM: Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature.

Features

1. EMITTER TRANSISTOR (NPN) TO-92MOD Power dissipation PCM: 900 mW (Tamb=25℃) Collector current 800 mA ICM: Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +15℃ 2. COLLECTER 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR.