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IRGS15B60KPBF |
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| Part Number | IRGS15B60KPBF |
| Manufacturer | International Rectifier |
| Description | PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. D2Pak IRGS15B60KPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Col... |
| Document |
 IRGS15B60KPBF Data Sheet
PDF 283.69KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
IGBT |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
Insulated Gate Bipolar Transistor |
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International Rectifier |
Insulated Gate Bipolar Transistor |
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International Rectifier |
PDP Trench IGBT |
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