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IRG7PH28UD1PBF |
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| Part Number | IRG7PH28UD1PBF |
| Manufacturer | International Rectifier |
| Description | IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features ... |
| Features |
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package Benefits Device optimized for induction heating and soft switching applications High efficiency due to low VCE(ON), low switching losses and ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI Base part number IRG7PH28UD1PbF IRG7PH28UD... |
| Document |
 IRG7PH28UD1PBF Data Sheet
PDF 409.01KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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