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TIM7785-8SL |
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| Part Number | TIM7785-8SL |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -... |
| Features |
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 28.5dBm Single Carrier Level.
MICROWAVE POWER GaAs FET
TIM7785-8SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 2.2A f = 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodul... |
| Document |
 TIM7785-8SL Data Sheet
PDF 319.66KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba Semiconductor |
MICROWAVE POWER GAAS FET |
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Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba Semiconductor |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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Toshiba |
MICROWAVE POWER GaAs FET |
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