2SC5171 |
|
Part Number | 2SC5171 |
Manufacturer | INCHANGE |
Description | ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power ... |
Features |
0mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A
VBE(on) Base-Emitter Voltage
IC= 1A ; VCE= 5V
ICBO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
Cob
Collector Output Capacitance
IE= 0 ; VCB= 10V,f=1MHz
fT
Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 5V
MIN TYP. MAX UNIT
180
V
1.0
V
1.5
V
5
μA
5
μA
100
320
40
16
pF
200
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at... |
Document |
2SC5171 Data Sheet
PDF 170.66KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
ETC |
NPN Transistor |
|
|
|
Toshiba Semiconductor |
NPN TRANSISTOR |
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
|
|
JCET |
NPN Transistor |
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
|
|
Toshiba Semiconductor |
NPN TRANSISTOR |
|
|
|
Inchange Semiconductor |
Silicon NPN Transistor |
|
|
|
Toshiba Semiconductor |
Silicon NPN Transistor |
|
|
|
INCHANGE |
NPN Transistor |
|