IS66WVE2M16DBLL |
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| Part Number | IS66WVE2M16DBLL |
| Manufacturer | ISSI |
| Description | PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include ... |
| Features |
Asynchronous and page mode interface Dual voltage rails for optional performance VDD 2.7V~3.6V, VDDQ 2.7V~3.6V Page mode read access Interpage Read access : 70ns Intrapage Read access : 20ns Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 18mA Standby < 150 uA (max.) Deep power-down (DPD) < 3uA (Typ) Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C Package: 48-ball TFBGA Copyright © 2013 Integrated Silicon Solutio... |
| Datasheet |
 IS66WVE2M16DBLL Data Sheet
PDF 386.71KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ISSI |
3.0V Core Async/Page PSRAM |
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ISSI |
1.8V Core Async/Page PSRAM |
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ISSI |
1.8V Core Async/Page PSRAM |
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ISSI |
3.0V Core Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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ISSI |
32Mb Async/Page PSRAM |
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