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FQPF9N25CT |
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| Part Number | FQPF9N25CT |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A • Low Gate Charge (Typ. 26.5 nC) • Low Crss (Typ. 45.5 pF) • 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power suppl... |
| Document |
 FQPF9N25CT Data Sheet
PDF 456.25KB |
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