STP5N62K3 N-channel MOSFET

STP5N62K3 N-channel MOSFET

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and hig.

Features

Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3
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■ VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 1 1 3 2 D²PAK IPAK Internal schematic diagram D(2) Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroel.