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K9WBG08U1M |
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| Part Number | K9WBG08U1M |
| Manufacturer | Samsung |
| Description | Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 3.3V vcc. Its NAND cell provides the most cost-effective solution for the solid state ap... |
| Features |
• Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.) * K9NCG08U5M : 50ns(Min.) • Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMO... |
| Document |
 K9WBG08U1M Data Sheet
PDF 1.80MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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Samsung |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
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Samsung |
Nand Flash Memory |
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Samsung semiconductor |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
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Samsung |
4Gb D-die NAND Flash |
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Samsung |
4Gb E-die NAND Flash |
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Samsung |
4Gb F-die NAND Flash |
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Samsung semiconductor |
(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
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Fuji Electric |
2SK903-MR |
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