BU102S Jingdao NPN power transistor

logo


BU102S

Jingdao
BU102S
BU102S BU102S
zoom Click to view a larger image
Part Number BU102S
Manufacturer Jingdao
Description R www.jdsemi.cn ◆Si NPN ◆RoHS COMPLIANT BU102S Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. 1.APPLICATION Fluorescent Lamp、Charger and Switch-mode power supplies 2.FEATURES H...
Features High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-92T 4.Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified 1 Base(B) 2 Collector(C) 3 Emitter(E) PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Ta=25℃ Power Dissipation Tc=25℃ Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg VALUE 700 400 9 1.0 0.8 11 150 -55~150 UNIT V V V A W ℃ ℃ 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor V...

Document Datasheet BU102S Data Sheet
PDF 125.96KB


Distributor Stock Price Buy




Similar Datasheet

No. Part # Manufacture Description Datasheet
1
BU102

INCHANGE
NPN Transistor
Datasheet
2
BU102

Savantic
Silicon NPN Power Transistors
Datasheet
3
BU102S

PENGAI
NPN Transistor
Datasheet
4
BU100

Inchange Semiconductor
Silicon NPN Power Transistors
Datasheet
5
BU1006

Vishay Siliconix
Enhanced PowerBridge Rectifiers
Datasheet
6
BU1006-E3

Vishay
Bridge Rectifiers
Datasheet
7
BU1006-M3

Vishay
Bridge Rectifiers
Datasheet
8
BU1006A

Vishay Siliconix
Enhanced PowerBridge Rectifiers
Datasheet
9
BU1006A-E3

Vishay
Bridge Rectifiers
Datasheet
10
BU1008

Vishay Siliconix
Enhanced PowerBridge Rectifiers
Datasheet
More datasheet from Jingdao



Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)