2SK3892 Silicon N-channel power MOSFET

2SK3892 Silicon N-channel power MOSFET

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply  Features  Gate-source surrender voltage VGSS : ± 30.

Features

 Gate-source surrender voltage VGSS : ± 30 guaranteed  Avalanche energy capacity guaranteed: EAS > 986 mJ  High-speed switching: tf = 39 ns
 Package  Code TO-220D-A1  Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Drain power dissipation Junction temperature Storage temperature EAS PD Tj Ta = 25°C Tstg Note) *: L = 2.67 mH, IL = 22 A, VDD = 50 V, 1 pulse Parameter on tin
 Electrical Characteristics TC = 25°C±3°C Symbol VDSS IDS.