FDMS86101DC N-Channel MOSFET

FDMS86101DC N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient th.

Features

„ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A „ Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A „ High performance technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Applications „ Primary DC-D.