SIS476DN Datasheet

SIS476DN N-Channel MOSFET

New Product SiS476DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) 0.0025 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A)f 40g 40g Qg (Typ.) 22.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen IV Power MOSFET • 100 % Rg a.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm
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• Switch Mode Power Supplies Personal Computers and Servers Telecom Bricks VRM’s and POL G D Bottom View Ordering Information: SiS476DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 15.