PTFA092211FL |
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Part Number | PTFA092211FL |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, t... |
Features |
• • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P –1dB = 250 W - Gain = 17.0 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power Pb-free, RoHS-compliant and thermally-enhanced packages Drain Efficiency (%) ACPR (dBc) 30 25 20 15 10 40 41 42 43 44 45 46 ... |
Document |
PTFA092211FL Data Sheet
PDF 442.53KB |
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Infineon |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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