PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides.

Features

internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.. PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.05 A
• Broadband internal matching -15 Intermodulation Distortion (dBc) -20 -25 -30 -35 -40 -45 -50 -55 Drain Efficiency (%) 960 MHz 940 MHz 920 MHz IMD Up Efficiency di 32 34 sc 36 38 n o 40 42 d e u n ti 40 35 30 25 20 15 10 .