PTFA072401EL |
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Part Number | PTFA072401EL |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching an... |
Features |
• • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion = –39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P –1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enhanced packages, Pb-free and RoHS compliant with low gold (<0.25 micron) plating 21 20 19 65 55 Gain (dB) Gain 45 35 25 Drain Ef... |
Document |
PTFA072401EL Data Sheet
PDF 345.98KB |
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No. | Part # | Manufacture | Description | Datasheet |
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Infineon |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
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|
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
|
|
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
|
|
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
|
|
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|
|
|
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|