MBR50060CT (MBR50045CT - MBR500100CTR) Schottky Power Diode

MBR50060CT (MBR50045CT - MBR500100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak rev.

Features

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• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR50045CT thru MBR500100CTR Silicon Schottky Diode, 500A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR50045CT (R) 45 32 45 500 MBR50060CT MBR50080CT (R) (R) 60 42 60 500 80 56 80 500 MBR500100C T(R) 100 70 100 500 Units V V V A I.