1N5827R Datasheet

1N5827R (1N5826 - 1N5828R) Schottky Power Diode

Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5826 thru 1N5828R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetit.

Features

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• Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5826 thru 1N5828R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC IF = 15 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o Test Conditions Symbol VRRM VRMS VDC IF IFSM http://www.DataSheet4U.net/ 1N5826(R) 20 14 20 15 5.