Document | DataSheet (192.72KB) |
TO-220 This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Vol.
- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation - Wide Reverse Bias S.O.A Symbol 2.Collector 1.Base c 3.Emitter General Description TO-220 This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Pulse Current Base Current Base Peak Current ( tP 5 ms ) http://www.DataSh.
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Winsemi |
High Voltage Fast - Switching NPN PowerTransistor |
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Winsemi |
High Voltage Fast-Switching NPN Power Transistor |
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Winsemi |
High Voltage Fast-Switching NPN Power Transistor |
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SemiWell |
High Voltage Fast-Switching NPN Power Transistor |
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Winsemi |
High Voltage Fast-Switching NPN Power Transistor |
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Winsemi |
High Voltage Fast-Switching NPN Power Transistor |
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ETC |
High Voltage Fast-Switching NPN Power Transistor |
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Winsemi |
High Voltage Fast-Switching NPN Power Transistor |
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SemiWell Semiconductor |
High Voltage Fast-Switching NPN Power Transistor |
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SemiWell Semiconductor |
High Voltage Fast-Switching NPN Power Transistor |
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WINSEMI SEMICONDUCTOR |
High Voltage Fast-Switching NPN Power Transistor |
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WINSEMI SEMICONDUCTOR |
High Voltage Fast-Switching NPN Power Transistor |
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ETC |
High Voltage Fast-Switching NPN Power Transistor |
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WINSEMI SEMICONDUCTOR |
High Voltage Fast-Switching NPN Power Transistor |
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WINSEMI SEMICONDUCTOR |
High Voltage Fast-Switching NPN Power Transistor |
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