Fast Switching Emitter Controlled Diode IDW75E60 Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C junction operating temperature Easy paralleling Pb-free lead plating; RoHS compliant Complete product spectrum and P.
600V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175°C junction operating temperature
Easy paralleling
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com/emcon/
Applications:
Welding
Motor drives
PG-TO247-3
Type IDW75E60
VRRM 600V
IF 75A
Maximum Ratings
Parameter
Repetitive peak reverse voltage Continuous forward current TC = 25C TC = 90C TC = 100C Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave Maximum repetitive forward current TC =.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | IDW75D65D1 |
Infineon |
Diode | |
2 | IDW100E60 |
Infineon Technologies |
Fast Switching Emitter Controlled Diode | |
3 | IDW10G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
4 | IDW10G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
5 | IDW12G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
6 | IDW15E65D2 |
Infineon |
Diode | |
7 | IDW15G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
8 | IDW16G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
9 | IDW20C65D2 |
Infineon |
Diode | |
10 | IDW20G120C5B |
Infineon |
Silicon Carbide Schottky Diode | |
11 | IDW20G65C5 |
Infineon Technologies |
SiC Schottky Barrier diodes | |
12 | IDW20G65C5B |
Infineon |
Silicon Carbide Diode | |
13 | IDW24G65C5B |
Infineon |
Silicon Carbide Diode | |
14 | IDW30C65D1 |
Infineon |
Diode | |
15 | IDW30C65D2 |
Infineon |
Diode |