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IDW20G65C5 |
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| Part Number | IDW20G65C5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows imp... |
| Features |
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 44 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability du... |
| Document |
 IDW20G65C5 Data Sheet
PDF 1.14MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Infineon |
Silicon Carbide Diode |
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Infineon |
Silicon Carbide Schottky Diode |
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Infineon |
Diode |
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Infineon |
Silicon Carbide Diode |
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Infineon Technologies |
Fast Switching Emitter Controlled Diode |
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Infineon |
Silicon Carbide Schottky Diode |
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Infineon Technologies |
SiC Schottky Barrier diodes |
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Infineon Technologies |
SiC Schottky Barrier diodes |
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Infineon |
Diode |
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Infineon |
Silicon Carbide Schottky Diode |
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