Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resi.
High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Load switching Power OR-ing http://www.DataSheet4U.net/ Server power supplies Sync rectifier 1.4 Quick reference data Table 1. VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 4.5 V; ID = 20 .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | PSMN3R7-100BSE |
nexperia |
N-Channel MOSFET | |
2 | PSMN3R7-100BSE |
INCHANGE |
N-Channel MOSFET | |
3 | PSMN3R7-25YLC |
NXP Semiconductors |
N-channel MOSFET | |
4 | PSMN3R0-30MLC |
nexperia |
N-channel MOSFET | |
5 | PSMN3R0-30MLC |
NXP Semiconductors |
MOSFET |