IRGP4640D-EPbF Datasheet

IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR

VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A G E n-channel GC E TO-247AC IRGP4640DPbF GC E TO-247AD IRGP4640D-EP Applications • Industrial M.

Features

Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4640DPbF IRGP4640D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quan.