FJ330301 Silicon P-Channel MOSFET

FJ330301 Silicon P-Channel MOSFET

This product complies with the RoHS Directive (EU 2002/95/EC). FJ330301 Silicon P-channel MOS FET For switching circuits  Overview FJ330301 is P-channel small signal MOS FET employed small size surface mounting package.  Package  Code SSSMini3-F2-B  Pin Name 1: Gate 2: Source 3: Drain  Fea.

Features

 Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)  High-speed switching  Small size surface mounting package: SSSMini3-F2-B  Contributes to miniaturization of sets, reduction of component count.  Eco-friendly Halogen-free package
 Marking Symbol: U1
 Internal Connection (D) 3
 Packaging Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Power dissipation Channel temperature Storage temperature Symbol VDSS V.